In a $p-n-p$ transistor,

In an $N-P-N$ transistor circuit,the common emitter configuration is used. $A$ load resistor $R_L$ is connected to the collector and a base resistor $R_B$ is connected to the base. Given $V_{CC} = 8V$,$V_{CE} = 4V$,$V_{BE} = 0.6V$,collector current $I_C = 4mA$,and current gain $\beta = 100$,find the values of $R_L$ and $R_B$ respectively.

For a transistor in the active region:
$(a)$ Base,emitter,and collector regions should have similar size and doping concentrations.
$(b)$ The base region must be very thin and lightly doped.
$(c)$ The emitter-base junction is forward-biased and the base-collector junction is reverse-biased.
$(d)$ Both the emitter-base junction and the base-collector junction are forward-biased.
Which one of the following pairs of statements is correct?

$A$ transistor is used as a common emitter amplifier with a load resistance $2 \ k\Omega$. The input resistance is $150 \ \Omega$. The base current is changed by $20 \ \mu A$,which results in a change in collector current by $1.5 \ mA$. The voltage gain of the amplifier is

An $n-p-n$ transistor with current gain $\beta=100$ in common emitter configuration is shown in the figure. The output voltage of the amplifier will be $.....V$.

In the following common emitter configuration, an $NPN$ transistor with current gain $\beta = 100$ is used. The output voltage of the amplifier will be