For a transistor in the active region:
$(a)$ Base,emitter,and collector regions should have similar size and doping concentrations.
$(b)$ The base region must be very thin and lightly doped.
$(c)$ The emitter-base junction is forward-biased and the base-collector junction is reverse-biased.
$(d)$ Both the emitter-base junction and the base-collector junction are forward-biased.
Which one of the following pairs of statements is correct?

  • A
    $(a), (b)$
  • B
    $(b), (c)$
  • C
    $(c), (d)$
  • D
    $(d), (a)$

Explore More

Similar Questions

The input resistance of a silicon transistor is $100\,\Omega$. Base current is changed by $40\,\mu A$,which results in a change in collector current by $2\,mA$. This transistor is used as a common emitter amplifier with a load resistance of $4\,k\Omega$. The voltage gain of the amplifier is:

An $N-P-N$ transistor conducts when:

The current amplification factor of a transistor is $50$. In a $CE$ amplifier circuit, the collector resistance is $5 \, k\Omega$ and the input resistance is $1 \, k\Omega$. If the input voltage is $0.01 \, V$, the output voltage is ........ $V$.

In a transistor,in common emitter configuration,the ratio of power gain to voltage gain is

For a transistor,the current ratio $\beta_{dc}$ is defined as the ratio of:

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo