In a transistor circuit,the emitter-base circuit of a $n-p-n$ transistor is always

$A$ transistor is used as an amplifier in $CB$ mode with a load resistance of $5 \, k\Omega$. The current gain of the amplifier is $0.98$ and the input resistance is $70 \, \Omega$. The voltage gain and power gain respectively are:

If $R_C$ and $R_B$ are respectively the resistances of the collector and base sides of the circuit,and $\beta$ is the current amplification factor,then the voltage gain of a transistor amplifier in common emitter configuration is

For a transistor in the active region:
$(a)$ Base,emitter,and collector regions should have similar size and doping concentrations.
$(b)$ The base region must be very thin and lightly doped.
$(c)$ The emitter-base junction is forward-biased and the base-collector junction is reverse-biased.
$(d)$ Both the emitter-base junction and the base-collector junction are forward-biased.
Which one of the following pairs of statements is correct?

For a transistor,$\alpha$ and $\beta$ are given as $\alpha = \frac{I_{C}}{I_{E}}$ and $\beta = \frac{I_{C}}{I_{B}}$. Then the correct relation between $\alpha$ and $\beta$ is:

$A$ transistor is used as an amplifier in a common-base configuration. The load resistance is $5 \text{ k}\Omega$, the current gain is $0.98$, and the input resistance is $70 \Omega$. The voltage gain and power gain are, respectively: