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(C) In an $n$-type semiconductor,pentavalent impurity atoms (donor atoms) are added to the intrinsic semiconductor.These donor atoms create discrete e

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the band gap and are close to the conduction band.

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(C) In an $n$-type semiconductor,pentavalent impurity atoms (donor atoms) are added to the intrinsic semiconductor.These donor atoms create discrete energy levels known as donor energy levels.These donor energy levels are located within the band gap,just below the conduction band.Because these levels are very close to the conduction band,the electrons in these levels can easily be thermally excited into the conduction band at room temperature.Therefore,the correct option is $(C)$.

In an extrinsic $n$-type semiconductor,the free electrons donated by the impurity atoms occupy energy levels in

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