In forward bias,the width of the potential ba | vedclass

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(B) In a $P-N$ junction diode,when forward bias is applied,the positive terminal of the battery is connected to the $P$-region and the negative termin

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Decreases

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(B) In a $P-N$ junction diode,when forward bias is applied,the positive terminal of the battery is connected to the $P$-region and the negative terminal to the $N$-region.This external electric field opposes the internal electric field of the depletion layer.As a result,the majority charge carriers are pushed towards the junction,which reduces the width of the depletion layer.Consequently,the width of the potential barrier decreases.

In forward bias,the width of the potential barrier in a $P-N$ junction diode:

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