In the depletion layer of a reverse-biased p- | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(C) In a $p-n$ junction,the depletion layer is formed by the diffusion of charge carriers,creating an internal electric field that opposes further dif

Vedclass · Accepted Answer

electric field is maximum.

Vedclass · Answer

(C) In a $p-n$ junction,the depletion layer is formed by the diffusion of charge carriers,creating an internal electric field that opposes further diffusion. When a reverse bias is applied,the external voltage adds to the built-in potential barrier,which increases the width of the depletion layer. Since the potential difference across the depletion layer increases significantly due to the reverse bias,and the width of the layer also increases,the electric field $(E = -dV/dx)$ within the depletion region becomes very high (maximum) compared to the unbiased state. Therefore,the electric field is maximum in the depletion layer of a reverse-biased $p-n$ junction.

In the depletion layer of a reverse-biased $p-n$ junction,the

Similar Questions

$A$ realistic graph depicting the variation of the reciprocal of input resistance $(1/r_i)$ in an input characteristics measurement in a common emitter transistor configuration is:

In the forward bias arrangement of a $PN-$junction diode:

Which of the following graphs is correct for a $P-N$ junction? (When the $P-N$ junction is forward biased.)

The circuit shown below contains two ideal diodes,each with a forward resistance of $50\,\Omega $. If the battery voltage is $6\,V$,the current through the $100\,\Omega $ resistance (in Amperes) is

If a $p-n$ junction is forward biased,then which of the following figures gives the correct direction of current inside the semiconductor?

Vedclass Test Series

Exam Paper Generator

Online Exam Module