In the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is

If one indium atom is doped per $5 \times 10^7$ silicon atoms,and the number density of silicon atoms is $5 \times 10^{28} \, \text{atoms}/\text{m}^3$,find the number density of acceptor atoms in $\text{atoms}/\text{cm}^3$.

$A$ potential difference of $2.5 \,V$ is applied across the faces of a germanium crystal plate. The face area of the crystal is $1 \,cm^2$ and its thickness is $1.0 \,mm$. The free electron concentration in germanium is $2 \times 10^{19} \,m^{-3}$ and the electron and hole mobilities are $0.33 \,m^2/V \cdot s$ and $0.17 \,m^2/V \cdot s$ respectively. The current across the plate will be .......... $A$.

Indium impurity is added to a sample of $Si$ to prepare a $p$-type semiconductor. In this semiconductor,one atom of indium is added per $5 \times 10^7$ atoms of $Si$. The atomic density of the $Si$ sample is $5 \times 10^{28} \text{ atoms/m}^3$. How many acceptor atoms will be present in a $1 \text{ cm}^3$ cube of silicon?

Holes are charge carriers in

In a $P$-type semiconductor,there is