If one indium atom is doped per 5 times 10^7 | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(C) The number density of silicon atoms is given as $N_{Si} = 5 	imes 10^{28} \, 	ext{atoms}/	ext{m}^3$. Since $1 \, 	ext{m}^3 = 10^6 \, 	ext{cm}

Vedclass · Accepted Answer

$1.0 	imes 10^{15} \, 	ext{atoms}/	ext{cm}^3$

Vedclass · Answer

(C) The number density of silicon atoms is given as $N_{Si} = 5 	imes 10^{28} \, 	ext{atoms}/	ext{m}^3$. Since $1 \, 	ext{m}^3 = 10^6 \, 	ext{cm}^3$,we convert the density to $	ext{cm}^3$: $N_{Si} = \frac{5 	imes 10^{28}}{10^6} \, 	ext{atoms}/	ext{cm}^3 = 5 	imes 10^{22} \, 	ext{atoms}/	ext{cm}^3$. It is given that $1$ indium atom is doped per $5 	imes 10^7$ silicon atoms. The number density of acceptor (indium) atoms $N_A$ is calculated as: $N_A = \frac{N_{Si}}{5 	imes 10^7} = \frac{5 	imes 10^{22}}{5 	imes 10^7} = 1 	imes 10^{15} \, 	ext{atoms}/	ext{cm}^3$.

If one indium atom is doped per $5 \times 10^7$ silicon atoms,and the number density of silicon atoms is $5 \times 10^{28} \, \text{atoms}/\text{m}^3$,find the number density of acceptor atoms in $\text{atoms}/\text{cm}^3$.

Similar Questions

Which of the following statements is true?

The semiconductors are generally

In an $N$-type $Ge$ semiconductor,the mobility of electrons is $5000 \ cm^2/V \cdot s$ and the conductivity is $5 \ mho/cm$. If the effect of holes is negligible,what is the concentration of impurity atoms?

The resistivity of a pure semiconductor is $0.5 \ \Omega m$. If the electron and hole mobility are $0.39 \ m^2 / V-s$ and $0.19 \ m^2 / V-s$ respectively,then calculate the intrinsic carrier concentration.

The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 \times 10^{16} \ m^{-3}$ each under equilibrium. When it is doped with indium and the hole concentration is $n_{h} = 4 \times 10^{22} \ m^{-3}$,the electron concentration is

Vedclass Test Series

Exam Paper Generator

Online Exam Module