Which of the following statements is true?

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(C) In an $n$-type semiconductor,the majority charge carriers are electrons.In a $p$-type semiconductor,the majority charge carriers are holes.Pure $G

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Majority carriers in $p$-type semiconductor are holes.

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(C) In an $n$-type semiconductor,the majority charge carriers are electrons.In a $p$-type semiconductor,the majority charge carriers are holes.Pure $Ge$ is an intrinsic semiconductor,and its resistivity decreases with an increase in temperature due to the generation of more charge carriers.Doping with a trivalent impurity (like $Al$,$Ga$,$In$) creates a $p$-type semiconductor.Doping with a pentavalent impurity (like $P$,$As$,$Sb$) creates an $n$-type semiconductor and decreases resistivity.Therefore,the statement that majority carriers in $p$-type semiconductor are holes is correct.

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