In an $N$-type $Ge$ semiconductor,the mobility of electrons is $5000 \ cm^2/V \cdot s$ and the conductivity is $5 \ mho/cm$. If the effect of holes is negligible,what is the concentration of impurity atoms?

  • A
    $6.25 \times 10^{15} \ cm^{-3}$
  • B
    $9.25 \times 10^{14} \ cm^{-3}$
  • C
    $6 \times 10^{13} \ cm^{-3}$
  • D
    $9 \times 10^{13} \ cm^{-3}$

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