The hole and the free electron concentrations in a pure silicon at room temperature are given by $1.4 \times 10^{16} \ m^{-3}$ each under equilibrium. When it is doped with indium and the hole concentration is $n_{h} = 4 \times 10^{22} \ m^{-3}$,the electron concentration is

  • A
    $0.49 \times 10^{10} \ m^{-3}$
  • B
    $0.14 \times 10^{10} \ m^{-3}$
  • C
    $0.36 \times 10^{10} \ m^{-3}$
  • D
    $0.72 \times 10^{10} \ m^{-3}$

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