In a $P$-type semiconductor,the energy level formed in the forbidden gap near the valence band is called ...

In a $P-$type semiconductor,germanium is doped with

Doping of intrinsic semiconductor is done:

Write briefly on $n$-type and $p$-type semiconductors.

$A$ semiconductor has equal electron and hole concentration of $6 \times 10^8 \, m^{-3}$. On doping with a certain impurity,the electron concentration increases to $9 \times 10^{12} \, m^{-3}$. The new hole concentration is:

Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If,for an $n$-type semiconductor,the density of electrons is $10^{19} \ m^{-3}$ and their mobility is $1.6 \ m^2/(V \cdot s)$,then the resistivity of the semiconductor (since it is an $n$-type semiconductor,the contribution of holes is ignored) is close to ................ $\Omega \cdot m$.