Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If,for an $n$-type semiconductor,the density of electrons is $10^{19} \ m^{-3}$ and their mobility is $1.6 \ m^2/(V \cdot s)$,then the resistivity of the semiconductor (since it is an $n$-type semiconductor,the contribution of holes is ignored) is close to ................ $\Omega \cdot m$.

  • A
    $2$
  • B
    $4$
  • C
    $0.4$
  • D
    $0.2$

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$A$ semiconductor has electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. If its intrinsic carrier density is $n_{i}$,what will be the value of hole concentration $p$ for which the conductivity will be minimum at a given temperature?

If ${n_e}$ and ${n_h}$ are the number of electrons and holes in a semiconductor heavily doped with phosphorus,then

$A$ hole in a $P-$type semiconductor is

$A$ $N-$ type semiconductor is

Which of the following statements is true for an $N$-type semiconductor?

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