$A$ semiconductor has electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. If its intrinsic carrier density is $n_{i}$,what will be the value of hole concentration $p$ for which the conductivity will be minimum at a given temperature?

$A$ silicon specimen is made into a $p$-type semiconductor by doping,on an average,one indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms } m^{-3}$,then the number of acceptor atoms in silicon per cubic centimeter will be:

If $N_A$ is the number density of acceptor atoms added and $N_D$ is the number density of donor atoms added to a semiconductor,and $n_e$ and $n_h$ are the number density of electrons and holes in it,then:

Write four points in distinguishing between $p$-type semiconductor and $n$-type semiconductor.

In the energy band diagram of a material shown in the figure,the open circles and filled circles denote holes and electrons,respectively. The material is:

In pure silicon,the electron-hole concentration at $T = 300 \ K$ is $7 \times 10^{15} \ m^{-3}$. Antimony is added as an impurity to silicon at a rate of $1$ atom per $10^7 \ Si$ atoms. Assume that half of the impurity atoms contribute their electrons to the conduction band. Calculate the factor by which the number of charge carriers increases. Given: the number density of silicon atoms is $5 \times 10^{28} \ m^{-3}$.