Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

  • A
    Both Statement $I$ and Statement $II$ are incorrect
  • B
    Statement $I$ is incorrect but Statement $II$ is correct
  • C
    Both Statement $I$ and Statement $II$ are correct
  • D
    Statement $I$ is correct but Statement $II$ is incorrect

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Which of the following graphs is correct for a $P-N$ junction? (When the $P-N$ junction is forward biased.)

The potential barrier of a $P-N$ junction is $0.5 \ V$. The thickness of the depletion layer is $5.0 \times 10^{-7} \ m$. Calculate the electric field.

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