The acceptor level of a $p$-type semiconductor is $6 \ eV$ above the valence band. The maximum wavelength of light which can create a hole would be: (Given $hc = 1242 \ eV \ nm$) (in $nm$)

$A$ donor impurity results in

Statement-$I$: By doping silicon semiconductor with pentavalent material,the electron density increases.
Statement-$II$: The $n$-type semiconductor has a net negative charge.
In the light of the above statements,choose the most appropriate answer from the options given below:

In an $n$-type semiconductor,the free electrons donated by the impurity atoms occupy energy levels in:

Explain the concept of the hole in the semiconductor.

If the number of holes and electrons are represented by $n_h$ and $n_e$ respectively,then which of the following is correct for an intrinsic semiconductor?