The addition of antimony atoms to a sample of intrinsic germanium transforms it into a material which is:

In which of the following statements is the obtained impure semiconductor of $p$-type?

In $n$-type semiconductor,electrons are majority charge carriers,but it does not show any negative charge. The reason is:

The electron concentration in an $n$-type semiconductor is the same as the hole concentration in a $p$-type semiconductor. An external electric field is applied across each of them. Compare the currents in them.

If the ratio of the number density of electrons to the number density of holes in a semiconductor is $7/5$ and the ratio of their currents is $7/4$,what is the ratio of their drift velocities?

An $n$-type and $p$-type semiconductor can be obtained by respectively doping pure silicon with