In $n$-type semiconductor,electrons are majority charge carriers,but it does not show any negative charge. The reason is:

In an $n$-type silicon,which of the following statements is true?

$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$, then the concentration of holes in the semiconductor is

For a $p-$type semiconductor,which of the following statements is true?

At a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:

Consider an $n$-type semiconductor in which $n_e$ and $n_h$ are the number of electrons and holes,respectively.
$(A)$ Holes are minority carriers.
$(B)$ The dopant is a pentavalent atom.
$(C)$ $n_e n_h \neq n_i^2$ (where $n_i$ is the number of electrons or holes in the semiconductor when it is in its intrinsic form).
$(D)$ $n_e n_h \geq n_i^2$.
$(E)$ The holes are not generated due to the donors.
Choose the correct answer from the options given below.