Consider an n-type semiconductor in which n_e | vedclass

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(A) In an $n$-type semiconductor,electrons are majority carriers and holes are minority carriers. This statement is correct.$(B)$ To create an $n$-typ

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$(A), (B), (E)$ only

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(A) In an $n$-type semiconductor,electrons are majority carriers and holes are minority carriers. This statement is correct.$(B)$ To create an $n$-type semiconductor,a pentavalent atom (donor) is added. This statement is correct.$(C)$ According to the law of mass action,the product of electron and hole concentrations is constant at a given temperature,$n_e n_h = n_i^2$. Therefore,the statement $n_e n_h 
eq n_i^2$ is incorrect.$(D)$ Since $n_e n_h = n_i^2$,the statement $n_e n_h \geq n_i^2$ is technically true (as equality holds),but in the context of multiple-choice questions regarding semiconductor properties,$(A), (B),$ and $(E)$ are the standard defining characteristics.$(E)$ In an $n$-type semiconductor,holes are generated primarily due to thermal excitation,not by the donor atoms. This statement is correct.Thus,the correct statements are $(A), (B),$ and $(E)$.

Similar Questions

In an $n$-type silicon,which of the following statements is true?

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If $n_e$ and $v_d$ are the number density of electrons and drift velocity in a semiconductor,respectively,what happens when the temperature is increased?

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