The base current in a transistor circuit changes from $45 \mu A$ to $140 \mu A$. Accordingly, the collector current changes from $0.2 \text{ mA}$ to $4.0 \text{ mA}$. The gain in current is

In an experiment of $CE$ configuration of $n-p-n$ transistor,the transfer characteristics are observed as given in the figure. If the input resistance is $200 \ \Omega$ and output resistance is $60 \ \Omega$,the voltage gain in this experiment will be:

In an $n-p-n$ transistor circuit,the collector current is $10 \, mA$. If $90 \%$ of the electrons reach the collector,then the emitter current will be:

$A$ transistor is used in common-emitter mode in an amplifier circuit. When a signal of $10 \, mV$ is added to the base-emitter voltage, the base current changes by $10 \, \mu A$ and the collector current changes by $1.5 \, mA$. The load resistance is $5 \, k\Omega$. The voltage gain of the transistor will be

Assertion: In a transistor,the base is made thin.
Reason: $A$ thin base makes the transistor stable.

An $NPN$ transistor is used in common emitter configuration as an amplifier with $1\,k\Omega$ load resistance. $A$ signal voltage of $10\,mV$ is applied across the base-emitter. This produces a $3\,mA$ change in the collector current and $15\,\mu A$ change in the base current of the amplifier. The input resistance and voltage gain are: