The breakdown in a reverse biased p-n junctio | vedclass

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(A) In a reverse biased $p-n$ junction diode,the breakdown can occur via two primary mechanisms: Zener breakdown and Avalanche breakdown.Avalanche bre

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large velocity of the minority charge carriers if the doping concentration is small

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(A) In a reverse biased $p-n$ junction diode,the breakdown can occur via two primary mechanisms: Zener breakdown and Avalanche breakdown.Avalanche breakdown typically occurs in diodes with low doping concentrations.In such diodes,the depletion region is relatively wide.When a high reverse bias voltage is applied,the minority charge carriers gain significant kinetic energy due to the strong electric field across the depletion region.These high-velocity carriers collide with atoms in the crystal lattice,causing impact ionization and creating more electron-hole pairs,which leads to a rapid increase in current,known as the breakdown.

The breakdown in a reverse biased $p-n$ junction diode is more likely to occur due to

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