The current $I$ in the circuit shown below is: (All diodes are ideal and identical)

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is

The curve between charge density and distance near a $P-N$ junction will be:

If each diode in the figure has a forward bias resistance of $25\,\Omega$ and infinite resistance in reverse bias,what will be the values of the currents $I_1, I_2, I_3,$ and $I_4$?

$A$ $p-n$ junction diode is connected to a battery of emf $5.7 \ V$ in series with a resistor of $5 \ k\Omega$ such that it is forward biased. If the barrier potential of the diode is $0.7 \ V$,neglecting the diode resistance,the current in the circuit is:

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.