The cut-in voltage for a silicon diode is approximately $V$.

In a semiconductor diode,the forward voltage is increased from $0.5 \ V$ to $0.7 \ V$. As a result,the forward current changes by $1 \ mA$. The forward resistance of the diode is ....... $\Omega$.

To make a $PN$ junction conducting,what condition must be met?

What are the values of the currents flowing in each of the following diode circuits $X$ and $Y$ respectively? (Assume that the diodes are ideal)

The $I-V$ characteristics of a semiconductor diode are shown in the figure. The resistance of the diode at $V = -8 \text{ V}$ and $I_{d} = 10 \text{ mA}$ are respectively:

$A$ potential barrier of $0.50 \ V$ exists across a $P-N$ junction. If the depletion region is $5.0 \times 10^{-7} \ m$ wide,the intensity of the electric field in this region is: