The dominant mechanism for the motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are:

In the following figure,the diodes which are forward biased are:

If a diode having infinite reverse bias resistance is connected in a circuit as shown in the figure,then $I_1$ and $I_2$ are respectively:

In a forward bias arrangement of a $p-n$ junction diode,the

The energy of a photon in a monochromatic light of wavelength $621 \ nm$ matches with the band gap of a semiconducting material. Then the minimum energy required to create an electron-hole pair from the semiconductor is
[Take $hc = 1242 \ eV-nm$,where $h$ is Planck's constant and $c$ is speed of light in vacuum] (in $eV$)

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.