In a forward bias arrangement of a $p-n$ junction diode,the

  • A
    $p$-region is connected to the positive terminal of the battery.
  • B
    $n$-region is connected to the positive terminal of the battery.
  • C
    $p$-region is connected to the negative terminal of the battery.
  • D
    $n$-region is connected to the negative terminal of the battery.

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When a $P-N$ junction is forward biased,which of the following is true?

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The $i-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2 \; V$ is applied is ....... $\Omega$.

$A$ $PN-$ junction has a thickness of the order of

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