The barrier potential of a $P-N$ junction diode does not depend on:

Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. The built-in potential in each diode is $0.7\; V$. For the input voltages shown in the figure,the voltage (in $Volts$) at point $A$ is

$A$ $2 \ V$ cell is connected across points $A$ and $B$ as shown in the figure. Assume that the resistance of each diode is zero in forward bias and infinity in reverse bias. The current supplied by the cell is (in $A$)

What are the static characteristics of a $p-n$ junction? Write its types.

The magnitude of the diffusion current in a $p-n$ junction is smaller than the magnitude of the drift current:

$A$ $2 \text{ V}$ battery is connected to a diode in forward bias. $A$ voltage of $0.5 \text{ V}$ is dropped across the diode,which is independent of the current flowing through it. $A$ current greater than $10 \text{ mA}$ causes excessive heating and damages the diode. If a current of $5 \text{ mA}$ is required in the diode,what value of series resistance must be connected in the circuit?