The magnitude of the diffusion current in a $p-n$ junction is smaller than the magnitude of the drift current:

In the case of forward biasing of a $PN-$ junction,which one of the following figures correctly depicts the direction of flow of charge carriers?

The depletion layer in a silicon diode is $1 \, \mu m$ wide and the knee potential is $0.6 \, V$. The electric field in the depletion layer is:

In an ideal junction diode, the current flowing through $PQ$ is (resistance is $2 \text{ k}\Omega$).

An electron in the $n$-region of a $p-n$ junction moves towards the junction with a speed of $5 \times 10^5 \ m/s$. If the barrier potential of the junction is $0.45 \ V$, then the speed with which the electron enters the $p$-region after penetration through the barrier is (Charge of the electron $e = 1.6 \times 10^{-19} \ C$ and mass of the electron $m = 9 \times 10^{-31} \ kg$).

In the circuit shown, assume the diode to be ideal. When $V_{i}$ increases from $2 \ V$ to $6 \ V$, the change in the current is (in $mA$):