The increase in the width of the depletion region in a $p-n$ junction diode is due to

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is......$A$

$A$ diode and a resistor are connected as shown in the figure. Out of the following statements, which one is true regarding the biasing of the diodes?

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.

In the diagram shown, the resistance between points $A$ and $B$ is '$R_1$' when an ideal diode $D$ is forward biased and is '$R_2$' when ideal diode $D$ is reverse biased. The ratio $R_1/R_2$ is

Assuming the diodes to be of silicon with forward resistance zero, the current $I$ in the following circuit is.......$mA$