The relation between the number of free elect | vedclass

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(D) In an intrinsic semiconductor,the concentration of charge carriers $(n)$ is given by the relation:$n = A T^{3/2} \exp\left(-\frac{E_g}{2 k_B T}\ri

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$n \propto T^{3/2}$

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(D) In an intrinsic semiconductor,the concentration of charge carriers $(n)$ is given by the relation:$n = A T^{3/2} \exp\left(-\frac{E_g}{2 k_B T}\right)$where $A$ is a constant,$E_g$ is the band gap energy,and $k_B$ is the Boltzmann constant.For a small range of temperatures,the exponential term varies slowly compared to the power term $T^{3/2}$.Therefore,the dominant temperature dependence is $n \propto T^{3/2}$.

The relation between the number of free electrons in semiconductors $(n)$ and its temperature $(T)$ is

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