The reverse biasing in a $PN$ junction diode

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

In a $p-n$ junction, an electric field of $5 \times 10^5 \ V/m$ exists in the depletion region. The minimum kinetic energy of a conduction electron, in order to diffuse from $n$-side to the $p$-side, is found to be $3.2 \times 10^{-20} \ J$. The width of the depletion region is,

Which of the following components cannot be easily fabricated or obtained from an $IC$ (Integrated Circuit)?

$A$ $5 \, V$ battery is connected across the points $X$ and $Y$. Assume $D_{1}$ and $D_{2}$ to be normal silicon diodes. Find the current (in $A$) supplied by the battery if the positive terminal of the battery is connected to point $X$.

The reverse breakdown voltage for a silicon diode is $6 \ V$ for a particular doping concentration and the forward bias voltage drop is $0.3 \ V$. Find the approximate current through the battery in the given circuit in $Amp$.