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$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

$A$ photo cell is a device used to:

The maximum rated power of the $LED$ is $2 \text{ mW}$ and it is used in the circuit with an input voltage of $5 \text{ V}$ as shown in the figure below. The current through resistance $R$ is $0.5 \text{ mA}$. The minimum value of the resistance $R_S$ to ensure that the $LED$ is not damaged is . . . . . . $\text{k}\Omega$.

$A$ solar cell is to be fabricated for efficient conversion of solar radiation to emf using material $A$. The solar cell is to be mechanically protected with the help of a coating using material $B$. If the band gap energy of materials $A$ and $B$ are $E_{A}$ and $E_{B}$ respectively,then which of the following choices is optimum for better performance of the solar cell?

In the working of a photodiode,the reverse current depends on

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