When an $n$-type semiconductor is heated,

What is the valency of donor impurity? Name these impurities.

Minority carriers in a $p$-type semiconductor are

Which impurity is doped in $Si$ to form an $N$-type semiconductor?

$A$ potential difference of $2.5 \,V$ is applied across the faces of a germanium crystal plate. The face area of the crystal is $1 \,cm^2$ and its thickness is $1.0 \,mm$. The free electron concentration in germanium is $2 \times 10^{19} \,m^{-3}$ and the electron and hole mobilities are $0.33 \,m^2/V \cdot s$ and $0.17 \,m^2/V \cdot s$ respectively. The current across the plate will be .......... $A$.

Which of the following statements is incorrect?