Which one of the diodes given below is reverse biased?

The approximate ratio of resistances in the forward and reverse bias of the $PN$-junction diode is

Which of the following is correct with respect to the following statements? Due to diffusion of electrons from $n$ to $p$-side:
$I$. electrons are accumulated in the depletion region.
$II$. electron drift current is from $p$-side to $n$-side.
$III$. an ionised donor is left in the $n$-region.
$IV$. electrons of $n$-side come to $p$-side and electron-hole combination takes place in $p$-side.
Select the correct option from the following.

As per the given circuit,the value of current through the battery will be $\dots \; A$.

The barrier potential of a $p-n$ junction depends on:
$(1)$ Type of semiconductor material
$(2)$ Amount of doping
$(3)$ Temperature
Which one of the following is correct?

Find the current $I$ in the circuit in $amp$.