Which one of the following graphs represents the forward bias characteristic of a diode?

  • A
    $C$
  • B
    $B$
  • C
    $D$
  • D
    $A$

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In the following circuits,which one of the diodes is reverse biased?

In the given circuits $(a)$,$(b)$,and $(c)$,the potential drop across the two p-n junctions are equal in:

The depletion layer in the $P-N$ junction region is caused by

The width of the depletion region in a $p-n$ junction diode is

$A$ semiconductor $X$ is made by doping a germanium crystal with indium $(Z = 49)$. $A$ second semiconductor $Y$ is made by doping germanium crystal with arsenic $(Z = 33)$. Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

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