Which statement is correct for a p-type semic | vedclass

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(B) In a $p$-type semiconductor,trivalent impurity atoms (acceptor atoms) are added to the intrinsic semiconductor. These acceptor atoms create a larg

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The number of holes in the valence band is more than the number of electrons in the conduction band at room temperature.

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(B) In a $p$-type semiconductor,trivalent impurity atoms (acceptor atoms) are added to the intrinsic semiconductor. These acceptor atoms create a large number of holes in the valence band. At room temperature,thermal excitation also generates some electron-hole pairs. However,the concentration of holes $(n_h)$ due to the acceptor atoms is significantly higher than the concentration of thermally generated electrons $(n_e)$ in the conduction band. Therefore,in a $p$-type semiconductor,the number of holes in the valence band is greater than the number of electrons in the conduction band $(n_h > n_e)$.

Which statement is correct for a $p$-type semiconductor?

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