Which of the following statements is correct regarding the charge of semiconductors?

Which statement is correct for a $p$-type semiconductor?

In a semiconductor,the concentrations of electrons and holes are $8 \times 10^{18} \, m^{-3}$ and $5 \times 10^{18} \, m^{-3}$ respectively. If the mobilities of electrons and holes are $2.3 \, m^2/V \cdot s$ and $0.01 \, m^2/V \cdot s$ respectively,then the semiconductor is:

How is electric conduction produced in an intrinsic semiconductor?

$A$ donor atom in a semiconductor has a loosely bound electron. The orbit of this electron is considerably affected by the semiconductor material but behaves in many ways like an electron orbiting a hydrogen nucleus. Given that the electron has an effective mass of $0.07 \, m_e$,where $m_e$ is the mass of the free electron,and the space in which it moves has a permittivity of $13 \, \varepsilon_0$,then the radius of the electron's lowermost energy orbit will be close to ................. $\mathring{A}$ (take the Bohr radius of the hydrogen atom as $0.53 \mathring{A}$).

For extrinsic semiconductors,when the doping level is increased: