$A$ semiconductor has equal electron and hole concentration of $2 \times 10^8 \ m^{-3}$. On doping with a certain impurity, the electron concentration increases to $4 \times 10^{10} \ m^{-3}$. What is the new hole concentration of the semiconductor?

In an $n$-type semiconductor, the Fermi energy level lies

Why are elemental dopants for Silicon or Germanium usually chosen from group $XIII$ or group $XV$?

The typical ionisation energy of a donor in silicon is.....$eV$

If the ratio of the concentration of electrons to that of holes in a semiconductor is $\frac{7}{5}$ and the ratio of currents is $\frac{7}{4}$,then what is the ratio of their drift velocities?

Consider an $n$-type semiconductor in which $n_e$ and $n_h$ are the number of electrons and holes,respectively.
$(A)$ Holes are minority carriers.
$(B)$ The dopant is a pentavalent atom.
$(C)$ $n_e n_h \neq n_i^2$ (where $n_i$ is the number of electrons or holes in the semiconductor when it is in its intrinsic form).
$(D)$ $n_e n_h \geq n_i^2$.
$(E)$ The holes are not generated due to the donors.
Choose the correct answer from the options given below.