In which section of a transistor is the doping concentration highest to produce a large number of majority charge carriers?

In the case of a transistor,what is the relationship between the current gain parameters $\alpha$ and $\beta$?

In a transistor,when the emitter current changes by $9.85 \,mA$,the collector current changes by $9.5 \,mA$. Then the base current is (in $\,mA$)

In an $N-P-N$ transistor circuit,the common emitter configuration is used. $A$ load resistor $R_L$ is connected to the collector and a base resistor $R_B$ is connected to the base. Given $V_{CC} = 8V$,$V_{CE} = 4V$,$V_{BE} = 0.6V$,collector current $I_C = 4mA$,and current gain $\beta = 100$,find the values of $R_L$ and $R_B$ respectively.

The correct relation between $\alpha$ (ratio of collector current to emitter current) and $\beta$ (ratio of collector current to base current) of a transistor is :

In a common base amplifier,the phase difference between the input signal voltage and the output voltage is