In a P-N junction under reverse bias,the depl | vedclass

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(C) When a $P-N$ junction is reverse biased,the external voltage is applied in the same direction as the built-in potential barrier. This causes the d

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Maximum electric field

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(C) When a $P-N$ junction is reverse biased,the external voltage is applied in the same direction as the built-in potential barrier. This causes the depletion region to widen. Since the number of charge carriers (holes in $P$-side and electrons in $N$-side) is pushed away from the junction,the depletion layer consists of immobile ionized atoms. The electric field in the depletion region increases significantly because the potential barrier height increases,leading to a maximum electric field at the junction interface.

In a $P-N$ junction under reverse bias,the depletion layer contains .......

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