Suppose the thickness of the depletion layer in a $P-N$ junction is $10^{-6} \ m$ and the value of the depletion barrier is $0.1 \ V$. Then the electric field is ....... $V \ m^{-1}$.

In forward bias,the width of the potential barrier in a $P-N$ junction diode:

Statement $I :$ When a $Si$ sample is doped with Boron,it becomes $P$-type and when doped by Arsenic it becomes $N$-type semiconductor such that $P$-type has excess holes and $N$-type has excess electrons.
Statement $II$ : When such $P$-type and $N$-type semiconductors are fused to make a junction,a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements,choose the most appropriate answer from the options given below.

The current-voltage relation of a diode is given by $I = (e^{1000V/T} - 1) \; mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \; V$ while measuring the voltage to obtain a current of $5 \; mA$ at $300 \; K$,what will be the error in the value of the current in $mA$?

In the circuit shown, assume the diode to be ideal. When $V_{i}$ increases from $2 \ V$ to $6 \ V$, the change in the current is (in $mA$):

The forbidden energy gap of $Ge$ is $0.75 \ eV$. The maximum wavelength of incident photon radiation that can generate an electron-hole pair in a $Ge$ semiconductor is ........... $\mathring{A}$.