$A$ $P-$ type semiconductor can be obtained by adding

Indium impurity is added to a sample of $Si$ to prepare a $p$-type semiconductor. In this semiconductor,one atom of indium is added per $5 \times 10^7$ atoms of $Si$. The atomic density of the $Si$ sample is $5 \times 10^{28} \text{ atoms/m}^3$. How many acceptor atoms will be present in a $1 \text{ cm}^3$ cube of silicon?

The resistivity of a pure semiconductor is $0.5 \ \Omega m$. If the electron and hole mobility are $0.39 \ m^2 / V-s$ and $0.19 \ m^2 / V-s$ respectively,then calculate the intrinsic carrier concentration.

$A$ semiconductor has electron and hole mobilities $\mu_{n}$ and $\mu_{p}$ respectively. If its intrinsic carrier density is $n_{i}$,what will be the value of hole concentration $p$ for which the conductivity will be minimum at a given temperature?

Which of the following when added as an impurity into silicon produces $n-$type semiconductor?

When a semiconductor is doped with donor impurity,