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(A) In a $p$-type semiconductor, the concentration of holes $(n_h)$ is approximately equal to the concentration of acceptor atoms $(N_A)$.Given: $n_h

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$10^{17} /m^3$

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(A) In a $p$-type semiconductor, the concentration of holes $(n_h)$ is approximately equal to the concentration of acceptor atoms $(N_A)$.Given: $n_h \approx N_A = 10^{21} /m^3$.The intrinsic concentration of electron-hole pairs is $n_i = 10^{19} /m^3$.Using the law of mass action for semiconductors: $n_e \cdot n_h = n_i^2$.Substituting the values: $n_e \cdot 10^{21} = (10^{19})^2$.$n_e \cdot 10^{21} = 10^{38}$.$n_e = 10^{38} / 10^{21} = 10^{17} /m^3$.Therefore, the concentration of electrons is $10^{17} /m^3$.

$A$ $Ge$ specimen is doped with $Al$. The concentration of acceptor atoms is $10^{21} \text{ atoms}/m^3$. Given that the intrinsic concentration of electron-hole pairs is $10^{19} /m^3$, the concentration of electrons in the specimen is:

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