If $N_h$ and $N_e$ are the numbers of holes and conduction electrons in an extrinsic semiconductor,respectively,then:

Which of the following statements is correct for an $n$-type semiconductor?

When an $n$-type semiconductor is heated,

$A$ pure $Si$ crystal has $4 \times 10^{28}$ atoms per $m^3$. It is doped with $1 \text{ ppm}$ concentration of antimony. The number of free electrons available will be

In the energy band diagram of a material shown in the figure,the open circles and filled circles denote holes and electrons,respectively. The material is:

In an intrinsic semiconductor,the energy gap $E_{g}$ is $1.2 \; eV$. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at $600 \; K$ and that at $300 \; K$? Assume that the temperature dependence of intrinsic carrier concentration $n_{i}$ is given by $n_{i} = n_{0} \exp \left(-\frac{E_{g}}{2 k_{B} T}\right)$,where $n_{0}$ is a constant.