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(D) $1$. Arsenic $(As)$ is a pentavalent impurity (Group $15$). When germanium $(Ge)$ is doped with arsenic,it provides an extra electron,making $X$ a

Vedclass · Accepted Answer

$X$ is $N-$ type,$Y$ is $P-$ type and the junction is reverse biased

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(D) $1$. Arsenic $(As)$ is a pentavalent impurity (Group $15$). When germanium $(Ge)$ is doped with arsenic,it provides an extra electron,making $X$ an $N-$ type semiconductor.$2$. Indium $(In)$ is a trivalent impurity (Group $13$). When germanium $(Ge)$ is doped with indium,it creates a hole,making $Y$ a $P-$ type semiconductor.$3$. The junction formed is a $PN-$ junction where $X$ ($N-$ side) is connected to the positive terminal of the battery and $Y$ ($P-$ side) is connected to the negative terminal.$4$. Since the $N-$ side is at a higher potential than the $P-$ side,the junction is reverse biased.

$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

Similar Questions

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

If $p-n$ junction diode is reverse biased,then:

$A$ $p-n$ junction diode is connected to a battery of $emf$ $5.5\, V$ and external resistance $5.1\, k\Omega$. The barrier potential in the diode is $0.4\, V$. The current in the circuit is

In a forward biased $p-n$ junction diode,the potential barrier in the depletion region will be of the form:

In the given figure,three silicon diodes are connected in series. What voltage at point $X$ will make all three diodes forward-biased?

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