In a forward biased p-n junction diode,the po | vedclass

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(D) In a $p-n$ junction diode,the potential barrier is formed due to the diffusion of charge carriers across the junction,creating a depletion region.

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$D$

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(D) In a $p-n$ junction diode,the potential barrier is formed due to the diffusion of charge carriers across the junction,creating a depletion region. When the diode is forward biased,the external voltage opposes the built-in potential barrier. This reduces the height of the potential barrier and decreases the width of the depletion region. In the given diagrams,options $(A)$ and $(B)$ represent a potential barrier that is being increased (characteristic of reverse bias),while options $(C)$ and $(D)$ represent a potential barrier that is being decreased (characteristic of forward bias). Comparing $(C)$ and $(D)$,the forward bias condition results in a lower potential barrier height and a narrower depletion width. Therefore,the correct representation for a forward biased $p-n$ junction is shown in option $(D)$.

In a forward biased $p-n$ junction diode,the potential barrier in the depletion region will be of the form:

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