Different voltages are applied across a $P-N$ junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

Which of the following components cannot be easily fabricated or obtained from an $IC$ (Integrated Circuit)?

In the given circuit, the voltage across load resistance $(R_L)$ is: (in $V$)

$Ge$ and $Si$ diodes start conducting at $0.3\,V$ and $0.7\,V$ respectively. In the following figure,if the $Ge$ diode connection is reversed,the value of $V_0$ changes by: ...... $V$ (assume that the $Ge$ diode has a large breakdown voltage).

In the diagram shown, the resistance between points $A$ and $B$ is '$R_1$' when an ideal diode $D$ is forward biased and is '$R_2$' when ideal diode $D$ is reverse biased. The ratio $R_1/R_2$ is

In the reverse biasing of a $p-n$ junction diode,