In the reverse biasing of a $p-n$ junction diode,

  • A
    the width of the depletion layer decreases.
  • B
    the width of the depletion layer increases.
  • C
    the number of minority charge carriers increase.
  • D
    the number of majority charge carriers increase.

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Similar Questions

Two statements are given below:
$A$. When the forward bias voltage across a $p-n$ junction diode increases above a certain threshold voltage, the diode current increases significantly.
$B$. This current is called reverse saturation current.
Choose the correct answer from the options given below:

Assuming that the junction diode is ideal, find the current in the arrangement shown in the figure. (in $\text{mA}$)

In the given figure,the potential difference between $A$ and $B$ is :-............. $V$

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The reverse biasing in a $PN$ junction diode

$A$ $2V$ battery is connected across the points $A$ and $B$ as shown in the figure. Assuming that the resistance of each diode is zero in forward bias and infinity in reverse bias,the current supplied by the battery when its positive terminal is connected to $A$ is........$A$

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