From the given transfer characteristic of a transistor in $CE$ configuration,the value of power gain of this configuration is $10^x$,for $R_B = 10\,k\Omega$ and $R_C = 1\,k\Omega$. The value of $x$ is $.....$.

$A$ transistor is connected in common emitter configuration. The collector supply is $8 V$ and the voltage drop across a resistor of $800 \Omega$ in the collector circuit is $0.5 V$. If the current gain factor $\alpha$ is $0.96$,the base current is

$A$ transistor is operated in $CE$ configuration at $V_{CC} = 2 \ V$ such that a change in base current from $100 \ \mu A$ to $200 \ \mu A$ produces a change in the collector current from $9 \ mA$ to $16.5 \ mA$. The value of current gain,$\beta$ is .........

For a given transistor,if $\alpha = 0.95$,find the common emitter current gain $\beta$.

In an $npn$ transistor, $10^{10}$ electrons enter the emitter in $10^{-6} \; s$. If $4\%$ of the electrons are lost in the base, the current transfer ratio $(\alpha)$ will be:

The part of a transistor which is heavily doped to produce a large number of majority carriers is