If a $p-n$ junction diode is forward biased,then:

  • A
    electric conduction is not possible.
  • B
    width of depletion layer decreases.
  • C
    width of depletion layer increases.
  • D
    barrier voltage increases.

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Similar Questions

In a $p-n$ junction diode not connected to any circuit:

$A$ diode is connected in parallel with a resistance $R$ as shown in the figure. The most probable current $(I)$ - voltage $(V)$ characteristic is:

For a $pn$ junction,the width of the space charge region (depletion layer) is approximately $\qquad$ $\mu m$.

Different voltages are applied across a $P-N$ junction and the currents are measured for each value. Which of the following graphs is obtained between voltage and current?

If the potential barrier across a $p-n$ junction is $0.6\,V$,then the electric field intensity in the depletion region having a width of $6 \times 10^{-6}\,m$ will be $......\times 10^{5}\,N/C$.

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