In $P-N$ junction,the barrier potential offers resistance to

  • A
    Free electrons in $N$ region and holes in $P$ region
  • B
    Free electrons in $P$ region and holes in $N$ region
  • C
    Only free electrons in $N$ region
  • D
    Only holes in $P$ region

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In a forward biased $PN$-junction diode,the potential barrier in the depletion region is of the form...

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$(A)$ The width of the zone is independent of the densities of the dopants (impurities).
$(B)$ The width of the zone is dependent on the densities of the dopants.
$(C)$ The electric field in the zone is produced by the ionized dopant atoms.
$(D)$ The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band.

The $i-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $2 \; V$ is applied is ....... $\Omega$.

An operational amplifier is a

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